document number: 89376 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount t rans z orb ? transient voltage suppressors p2sma130a thru p2sma220a vishay general semiconductor new product typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automo tive and telecommunication. features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in uni-direct ional 200 w peak pulse power capability with a 10/1000 s waveform ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition mechanical data case: do-214ac (sma) molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes the cathode end notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal primary characteristics v br 130 v to 220 v p ppm 200 w p d 0.5 w t j max. 150 c do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissip ation with a 10/1000 s waveform (fig. 1) p ppm (1)(2) 200 w peak pulse current with a 10/1000 s waveform (fig. 3) i ppm (1) see next table a power dissipa tion at t a = 25 c (fig. 6) p d 0.5 w operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89376 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p2sma130a thru p2sma220a vishay general semiconductor new product notes (1) pulse test: t p ? 50 ms (2) surge current waveform per fig. 3 and derate per fig. 2 note (1) mounted on minimum recommended pad layout ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse derating curve electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) (1) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) maximum temperature of v br (%/c) min. max. p2sma130a 2vk 124 137 1.0 111 1.0 1.11 179 0.140 p2sma140a 2vl 133 147 1.0 119 1.0 1.04 192 0.140 p2sma150a 2vm 143 158 1.0 128 1.0 0.97 207 0.140 p2sma170a 2vn 162 179 1.0 145 1.0 0.85 234 0.150 p2sma180a 2vp 171 189 1.0 154 1.0 0.81 246 0.150 p2sma200a 2vq 190 210 1.0 171 1.0 0.73 274 0.150 p2sma220a 2vr 209 231 1.0 185 1.0 0.61 328 0.150 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit thermal resistance, junction to ambient air r ? ja (1) 250 c/w thermal resistance, junction to mount r ? jm (1) 50 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode p2sma130a-m3/61t 0.064 61t 1800 7" di ameter plastic tape and reel p2sma130a-m3/5at 0.064 5at 7500 13" di ameter plastic tape and reel 0.01 1 10 100 p ppm - peak pul s e power (kw) t d - pul s e width ( s ) 0.1 1 10 100 1000 10 000 0.2 " x 0.2 " (5.0 mm x 5.0 mm) off voltage, v wm copper pad area s 0.1 0 255075100 100 75 50 25 0 125 150 175 t j - initial temperature (c) peak pul s e power (p pp ) or current (i pp ) derating in percentage, %
document number: 89376 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p2sma130a thru p2sma220a vishay general semiconductor new product fig. 3 - pulse waveform fig. 4 - typical j unction capacitance fig. 5 - typical transient thermal impedance fig. 6 - power derating curve package outline dimensions in inches (millimeters) 0 1.0 2.0 3.0 4.0 0 50 100 150 t d t - time (m s ) i ppm - peak pul s e current, % i r s m t r = 10 s peak value i ppm half value - i ppm i pp 2 t j = 25 c pul s e width (t d ) i s dened a s the point where the peak current decay s to 50 % of i ppm t r = 8 s t d = 1000 s t d = 20 s s e s tand-off voltage (v) mea s ured at s tand-off voltage v wm t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 210 200 190 180 170 160 150 140 130 mea s ured at zero bia s s e duration ( s ) tran s ient thermal impedance (c/w) 0 175 0 0.6 t a - ambient temperature (c) p m(av) - s teady s tate power di ss ipation (w) 0.5 0.4 0.3 0.2 0.1 150 125 100 75 50 25 fr-4 board, on minimum recommended pad layout 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pa d layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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